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low power single operational amplif ier AS321 data sheet 1 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited general description the AS321 is a high gain and internally frequency compensated operational amplifier specifically designed to operate from a single power supply. opera- tion from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. typical applications include batter y charger, active filters, general purpose controllers and most conventional operational amplifier circuits. the AS321 is compatible with industry standard 321. the AS321 is available in sot-23-5 packages. features excellent phase margin: 60 deg. large voltage gain: 100db (typical) low input bias current: 20na (typical) low input offset voltage: 2mv (typical) low supply current: 0.35ma at v cc =5v wide power supply voltage: single supply: 3v to 36v dual supplies: 1.5v to 18v wide input common mode voltage range: 0v to v cc -1.5v applications battery charger active filters general purpose controllers, instruments figure 1. package type of AS321 sot-23-5
low power single operational amplif ier AS321 data sheet 2 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited functional block diagram output input + input - v ee figure 2. pin configuration of AS321 (top view) figure 3. functional bl ock diagram of AS321 pin configuration k package (sot-23-5) v cc q2 q4 q3 q1 q8 q9 6 a 4 a q10 q11 50 a q5 q6 q13 rsc cc 100 a q7 input+ output q12 v cc v ee input- 1 2 34 5
low power single operational amplif ier AS321 data sheet 3 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol value unit power supply voltage v s (v cc -v ee ) 40 v differential input voltage v id 40 v input voltage v in -0.3 to 40 v thermal resistance to ambient r ja 260 o c/w operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absol ute maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) recommended operating conditions parameter symbol min max unit supply voltage v cc 336v ambient operating temperature range t a -40 85 o c ordering information bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. package temperature range part number marking id packing type lead free green lead free green sot-23-5 -40 to 85 o c AS321ktr-e1 AS321ktr-g1 e6t g6t tape & reel circuit type package e1: lead free AS321 tr: tape and reel k: sot-23-5 - g1: green
low power single operational amplif ier AS321 data sheet 4 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited electrical characteristics parameter symbol conditions min typ max unit input offset voltage v io v o =1.4v, r s =0 ? , v cc =5v to 30v (note 3) 25 mv 7 average temperature coeffi- cient of input offset voltage ? v io / ? t t a =-40 to 85 o c 7 v/ o c input bias current i bias i in + or i in -, v cm =0v 20 100 na 200 input offset current i io i in + - i in -, v cm =0v 530 na 100 input common mode voltage range (note 4) v cm v cc =30v, cmrr 50db 0 v cc -1.5 v supply current i cc r l = , v cc =5v 0.35 0.80 ma 0.45 1.0 r l = , v cc =30v 0.45 1.2 ma 0.65 1.5 large signal voltage gain g v v cc =15v, v o =1v to 11v, r l 2 k ? 85 100 db 80 common mode rejection ratio cmrr v cm =0v to (v cc -1.5)v, r s 10k ? 60 70 db 60 power supply rejection ratio psrr v cc =5v to 30v, r s 10k ? 70 100 db 60 output current source i source v in +=1v, v in -=0v, v cc =15v, v o =2v 20 40 ma 20 sink i sink v in +=0v, v in -=1v, v cc= 15v, v o =2v 10 15 ma 5 v in +=0v, v in -=1v, v cc =15v, v o =0.2v 12 50 a output short circuit current to ground i sc v cc =15v 40 60 ma output voltage swing v oh v cc =30v, r l =2k ? 26 v 26 v cc =30v, r l =10k ? 27 28 27 v ol v cc =5v, r l = 10k ? 520 mv 30 limits in standard typeface are for t a =25 o c, bold typeface applies over -40 o c to 85 o c (note 2), v cc =5v, v ee =0v, v o =1.4v unless otherwise specified.
low power single operational amplif ier AS321 data sheet 5 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited electrical characteristics (continued) parameter symbol conditions min typ max unit total harmonic distortion thd f=1khz, av=20db, r l =2k : , v o =2vp-p, c l =100pf, v cc =30v 0.015 % phase margin i m 60 deg thermal resistance (junction to case) t jc sot-23-5 101 o c/w limits in standard typeface are for t a =25 o c, bold typeface applies over -40 o c to 85 o c (note 2), v cc =5v, v ee =0v, v o =1.4v unless otherwise specified. note 2: limits over the full temperature are guaranteed by design, but not tested in production. note 3: over the full input common-mode range 0v to v cc -1.5v(at 25 o c) . note 4: the input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c ). the upper end of the common-mode voltage range is v cc -1.5v (at 25 o c ), but either or both inputs can go to +36v without damages, independent of the magnitude of the v cc . typical performance characteristics 0 5 10 15 0 5 10 15 positive negative input voltage (+ v dc ) power supply voltage (+ v dc ) figure 4. input voltage range figure 5. input current -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20 input current (na) temperature ( o c)
low power single operational amplif ier AS321 data sheet 6 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited figure 6. supply current figure 7. voltage gain 0 5 10 15 20 25 30 35 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 supply current (ma) supply voltage (v) 0 8 16 24 32 40 60 75 90 105 120 power supply voltage (v) voltage gain (db) r l =2k ? r l =20k ? electrical characteristics (continued) figure 8. open loop gain vs.frequency figure 9. voltage follower pulse response input time ( s) output voltage (v) voltage (v) 0 4 8 1216202428323640 0 1 2 3 1 2 3 4 0 -20 0 20 40 60 80 0.2k 1k 10k 100k 1m 2m open loop gain (db) frequency (hz) v cc =30v, v ee =0v r l =2k ? , c l =100pf
low power single operational amplif ier AS321 data sheet 7 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited figure 10. voltage follower pulse response (small signal) time ( s) output voltage (mv) figure 11. large signal frequency response typical performance ch aracteristics (continued) 04 812 16 20 100 200 300 400 500 600 700 800 1k 10k 100k 1m 0 5 10 15 20 frequency (hz) output swing (v) figure 12. output characteristics current sourcing figure 13. output characteristics current sinking 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 10 v cc =15v output voltage (v) output sink current (ma) v cc =5v 0.1 1 10 100 0 1 2 3 4 5 6 7 8 output voltage referenced to vcc (v) output source current (ma)
low power single operational amplif ier AS321 data sheet 8 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited figure 14. current limiting -25 0 25 50 75 100 125 0 10 20 30 40 50 60 70 80 90 100 output current (ma) temperature ( o c) typical performance ch aracteristics (continued) figure 17. dc summing amplifier figure 16. power amplifier typical application r1 910k v o r2 100k r3 91k v in(+) v cc r l AS321 - + r6 100k v o r5 100k r1 100k r2 100k r3 100k r4 100k +v 1 +v 2 +v 3 +v 4 AS321 + -
low power single operational amplif ier AS321 data sheet 9 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited figure 20. pulse generator figure 18. ac coupled non-inverting amplifier figure 21. dc coupled low-pass active filter figure 19. fixed current sources typical applicat ion (continued) v cc r4 3k r3 2k + - 2v + - 2v i1 i2 1ma AS321 r1 2k r2 - + r5 100k r3 100k r4 100 k r2 100k r1 1m v o v cc AS321 0.001 f - + r2 16k r1 16k v in r3 100k AS321 r4 100k c2 0.01 f c1 0.01 f f 0 v 0 0 fo=1khz q=1 a v =2 + - v o r4 100k v cc r3 1m r1 100k r2 1m c1 0.1 f c in r5 100k c o v o AS321 r l 10k c2 10 f a v =1+r2/r1 a v =11 (as shown) - + ac r b 6.2k
low power single operational amplif ier AS321 data sheet 10 may. 2010 rev. 1. 5 bcd semiconductor manufacturing limited mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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